PART |
Description |
Maker |
MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
BD675-D |
Plastic Medium-Power Silicon NPN Darlingtons
|
ON Semiconductor
|
BD439 BD441 BD435 BD437 BD437G BD437T |
Plastic Medium Power Silicon NPN Transistor
|
ONSEMI[ON Semiconductor]
|
MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
2N4921 2N4922 2N4923 |
MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
BD179-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
2N4921G 2N4923G 2N4921 2N4921_06 2N4922 2N4922G 2N |
Medium−Power Plastic NPN Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system 4.0 AMPERE POWER TRANSISTORS Plastic Medium-Power Silicon NPN Darlingtons DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
|
CFD611 |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE.
|
Continental Device India Limited
|